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Title: GaN/MOSFET功率電晶體於升壓電路效率分析
Authors: 林振玉
Keywords: 氮化鎵
Date: 2017-02-10
Issue Date: 2017-02-16 15:02:48 (UTC+8)
Abstract: 本研究使用高電子遷移率氮化鎵GaN,第六代CoolMOSFET 與早期IRF840 MOSFET等三種不同功率電晶體實作直流升壓電路。實驗設計規格為:輸入直流電壓48V,額定輸出直流電壓200V。從Vgs與 Vds 動態波形曲線中可知: 氮化鎵與CoolMOSFET功率電晶體,開關截止轉移變化,進入米勒平原區停滯時間明顯增長,可以增加閘極放電電路設計改善。直流升壓電路在輕載時轉換效率皆不佳,輸出大於20W時,轉換效率可達96%,在額定負載200W時,IRF840轉換效率明顯下降。在頻率100KHz時 GaN, CoolMOS 與IRF 840功率電晶體,所呈現最大轉換效率約為95.7%, 96.3%與95.3%。在頻率500KHz時,最大轉換效率約為88.577%, 89.2%與85.845%。切換頻率越高時,轉換效率逐漸下降。
In this study, three different power transistors, gallium nitride, Sixth Generation CoolMOS and traditional IRF840 MOSFET, were used to implement in the DC booster circuit. Input DC voltage of 48V and rated output DC voltage of 200V were specified in our experiments. According to the dynamic waveform curves of Vgs and Vds, Gallium nitride and CoolMOS demonstrate that they spend a long time to pass through the Miller plateau during switching cut-off transition. This effect can be improved by by adding the gate discharge circuit design. The conversion efficiencies at light loading is not good. When the output loading is greater than 20W, the conversion efficiency of up to 96%. At rated loading of 200W, IRF840 conversion efficiency decreased apparenetly. GaN, CoolMOS and IRF 840 power transistors exhibit a maximum conversion efficiency of 95.7%, 96.3% and 95.3% at a frequency of 100 kHz, respectively. At the frequency of 500KHz, the maximum conversion efficiency of about 88.577%, 89.2% and 85.845%. The higher the switching frequency, the lower the conversion efficiency.
Appears in Collections:[電機與電子工程系] 學位論文

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