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Please use this identifier to cite or link to this item: http://tustr.lib.tust.edu.tw:8080/ir/handle/987654321/1176

Title: 爐管氮化矽均勻度改善之研究
Authors: 張治文
Chang, Chih-Wen
Contributors: 電機與電子工程系
Keywords: 爐管
晶圓良率
矽晶圓
歧管
均勻度
furnace
wafer yield
wafer
manifold
uniformity
Date: 2017-07-31
Issue Date: 2017-07-31 14:02:23 (UTC+8)
Abstract: 晶圓常常會因為人為處理的疏忽和機台異常或錯誤調整都會毀損易碎的矽晶圓。常有錯誤的製程,導致有對準的錯誤造成微影步驟出現問題,加上製程上伴隨而來的蝕刻或離子佈植、也會造成錯誤的摻雜濃度、極差的均勻度,或在晶圓上的過量粒子等,也都會損毀矽晶圓。當這些矽晶圓的毀損除會造成實用上的損失外,並降低晶圓良率。本研究利用改變爐管不同的設備條件,將實驗的設備調整水平調整方向、歧管、水流量調整、抽風量調整來尋找出最佳的條件以改善矽晶圓之均勻度以進一步提高晶圓良率。

Wafer is often caused by human handling of negligence and machine anomalies or error adjustments can damage fragile silicon wafers. Wrong process, esulting in a misplaced error that causes a problem with the lithography step, plus the process of etching or ion implantation, and also cause the wrong doping concentration, poor uniformity or excess particles on the wafer that will also damage the silicon wafer. When these silicon wafers will cause damage to the practical loss that is the general company does not want to see the problem. Therefore, the company will try every means to improve wafer yield. This study uses different equipment conditions to change the furnace tube, adjust the direction of the equipment to adjust the direction of the equipment, manifold, water flow adjustment and ventilation adjustment to find the best conditions to improve the uniformity.
Appears in Collections:[電機與電子工程系] 學位論文

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